Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Dimensiune celula
D Series
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
4.65mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Detalii produs
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,44
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,714
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,44
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,714
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,44 | € 7,20 |
50 - 120 | € 1,24 | € 6,20 |
125 - 245 | € 1,10 | € 5,50 |
250 - 495 | € 1,02 | € 5,10 |
500+ | € 0,94 | € 4,70 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Dimensiune celula
D Series
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
4.65mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Detalii produs