Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220AB
Serie
D Series
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
9 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Number of Elements per Chip
1
Latime
4.65mm
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 28,50
€ 0,57 Each (In a Tube of 50) (fara TVA)
€ 34,48
€ 0,69 Each (In a Tube of 50) (cu TVA)
50
€ 28,50
€ 0,57 Each (In a Tube of 50) (fara TVA)
€ 34,48
€ 0,69 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 0,57 | € 28,50 |
| 100 - 200 | € 0,45 | € 22,50 |
| 250+ | € 0,39 | € 19,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220AB
Serie
D Series
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
9 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Number of Elements per Chip
1
Latime
4.65mm
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs


