Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.4 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
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P.O.A.
Standard
10
P.O.A.
Standard
10
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.4 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm