Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Serie
ThunderFET
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 4,05
€ 0,81 Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,90
€ 0,98 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 4,05
€ 0,81 Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,90
€ 0,98 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Serie
ThunderFET
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


