Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Tip pachet
TSOP-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
30 nC @ 8 V
Temperatura maxima de lucru
+150 °C
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.1mm
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 7,80
€ 0,39 Buc. (Intr-un pachet de 20) (fara TVA)
€ 9,28
€ 0,464 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 7,80
€ 0,39 Buc. (Intr-un pachet de 20) (fara TVA)
€ 9,28
€ 0,464 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 180 | € 0,39 | € 7,80 |
200 - 480 | € 0,29 | € 5,80 |
500 - 980 | € 0,24 | € 4,80 |
1000 - 1980 | € 0,19 | € 3,80 |
2000+ | € 0,18 | € 3,60 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Tip pachet
TSOP-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
30 nC @ 8 V
Temperatura maxima de lucru
+150 °C
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.1mm
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs