Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Latime
1.4mm
Typical Gate Charge @ Vgs
1.45 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
10
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Latime
1.4mm
Typical Gate Charge @ Vgs
1.45 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs