Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220AB
Maximum Drain Source Resistance Rds
0.028Ω
Maximum Power Dissipation Pd
150W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
66nC
Maximum Gate Source Voltage Vgs
10V
Temperatura maxima de lucru
175°C
Transistor Configuration
Single
Inaltime
6.48mm
Lungime
14.4mm
Standards/Approvals
RoHS 2002/95/EC
Latime
10.52mm
Number of Elements per Chip
1
Automotive Standard
No
Tara de origine
China
Informatii despre stoc temporar indisponibile
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
P.O.A.
Each (In a Tube of 50) (fara TVA)
Informatii despre stoc temporar indisponibile
50
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220AB
Maximum Drain Source Resistance Rds
0.028Ω
Maximum Power Dissipation Pd
150W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
66nC
Maximum Gate Source Voltage Vgs
10V
Temperatura maxima de lucru
175°C
Transistor Configuration
Single
Inaltime
6.48mm
Lungime
14.4mm
Standards/Approvals
RoHS 2002/95/EC
Latime
10.52mm
Number of Elements per Chip
1
Automotive Standard
No
Tara de origine
China


