Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
39 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
66 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 14,70
€ 2,94 Buc. (Intr-un pachet de 5) (fara TVA)
€ 17,79
€ 3,557 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 14,70
€ 2,94 Buc. (Intr-un pachet de 5) (fara TVA)
€ 17,79
€ 3,557 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 2,94 | € 14,70 |
| 50 - 120 | € 2,74 | € 13,70 |
| 125 - 245 | € 2,60 | € 13,00 |
| 250 - 495 | € 2,29 | € 11,45 |
| 500+ | € 2,12 | € 10,60 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
39 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
66 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs


