Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
12 nC @ 5 V
Latime
6.29mm
Transistor Material
Si
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Impachetare pentru productie (Punga)
1
P.O.A.
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Punga)
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
12 nC @ 5 V
Latime
6.29mm
Transistor Material
Si
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


