Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 89,00
€ 0,89 Each (Supplied in a Tube) (fara TVA)
€ 107,69
€ 1,077 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
100
€ 89,00
€ 0,89 Each (Supplied in a Tube) (fara TVA)
€ 107,69
€ 1,077 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 100 - 240 | € 0,89 | € 8,90 |
| 250 - 490 | € 0,84 | € 8,40 |
| 500 - 990 | € 0,74 | € 7,40 |
| 1000+ | € 0,69 | € 6,90 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs


