Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
6.73mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
6.22mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 0,91
€ 0,91 Buc. (fara TVA)
€ 1,10
€ 1,10 Buc. (cu TVA)
Standard
1
€ 0,91
€ 0,91 Buc. (fara TVA)
€ 1,10
€ 1,10 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
6.73mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
6.22mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


