Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Latime
2.39mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
6.22mm
Tara de origine
Malaysia
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Standard
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Latime
2.39mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
6.22mm
Tara de origine
Malaysia
Detalii produs


