Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
6.22mm
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
6.22mm
Detalii produs


