Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
400 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 7,40
€ 0,74 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,95
€ 0,895 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 7,40
€ 0,74 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,95
€ 0,895 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 0,74 | € 7,40 |
| 100 - 240 | € 0,69 | € 6,90 |
| 250 - 490 | € 0,65 | € 6,50 |
| 500 - 990 | € 0,57 | € 5,70 |
| 1000+ | € 0,53 | € 5,30 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
400 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs


