Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
400 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 37,50
€ 0,75 Buc. (Livrat pe rola) (fara TVA)
€ 45,38
€ 0,908 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 37,50
€ 0,75 Buc. (Livrat pe rola) (fara TVA)
€ 45,38
€ 0,908 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 50 - 120 | € 0,75 | € 3,75 |
| 125 - 245 | € 0,59 | € 2,95 |
| 250 - 495 | € 0,38 | € 1,90 |
| 500+ | € 0,35 | € 1,75 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
400 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


