Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Latime
6.22mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
10
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Latime
6.22mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Tara de origine
China
Detalii produs


