Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
1000 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 48,10
€ 4,81 Each (Supplied in a Bag) (fara TVA)
€ 58,20
€ 5,82 Each (Supplied in a Bag) (cu TVA)
Impachetare pentru productie (Punga)
10
€ 48,10
€ 4,81 Each (Supplied in a Bag) (fara TVA)
€ 58,20
€ 5,82 Each (Supplied in a Bag) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Punga)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 49 | € 4,81 |
| 50 - 99 | € 4,33 |
| 100 - 249 | € 4,02 |
| 250+ | € 3,74 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
1000 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


