Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
800 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
130 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 3,81
€ 3,81 Each (Supplied in a Bag) (fara TVA)
€ 4,61
€ 4,61 Each (Supplied in a Bag) (cu TVA)
Impachetare pentru productie (Punga)
1
€ 3,81
€ 3,81 Each (Supplied in a Bag) (fara TVA)
€ 4,61
€ 4,61 Each (Supplied in a Bag) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Punga)
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
800 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
130 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


