Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
140 nC @ 10 V
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 41,60
€ 4,16 Each (Supplied in a Bag) (fara TVA)
€ 50,34
€ 5,03 Each (Supplied in a Bag) (cu TVA)
Impachetare pentru productie (Punga)
10
€ 41,60
€ 4,16 Each (Supplied in a Bag) (fara TVA)
€ 50,34
€ 5,03 Each (Supplied in a Bag) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Punga)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 49 | € 4,16 |
| 50 - 99 | € 3,90 |
| 100 - 249 | € 3,73 |
| 250+ | € 3,32 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
140 nC @ 10 V
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


