Vishay P-Channel MOSFET, 12 A, 200 V, 3-Pin TO-247AC IRFP9240PBF

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor

€ 3,51
€ 3,51 Buc. (fara TVA)
€ 4,25
€ 4,25 Buc. (cu TVA)
Standard
1
€ 3,51
€ 3,51 Buc. (fara TVA)
€ 4,25
€ 4,25 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 3,51 |
| 10 - 49 | € 3,14 |
| 50 - 99 | € 2,94 |
| 100 - 249 | € 2,79 |
| 250+ | € 2,51 |

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor


