Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Serie
D Series
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor

€ 4,42
€ 4,42 Buc. (fara TVA)
€ 5,35
€ 5,35 Buc. (cu TVA)
Standard
1
€ 4,42
€ 4,42 Buc. (fara TVA)
€ 5,35
€ 5,35 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 4,42 |
| 10 - 49 | € 4,27 |
| 50 - 99 | € 4,11 |
| 100 - 249 | € 3,88 |
| 250+ | € 3,68 |

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Serie
D Series
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor



