Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Serie
D Series
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
5.31mm
Lungime
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
20.82mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 58,25
€ 2,33 Each (In a Tube of 25) (fara TVA)
€ 70,48
€ 2,819 Each (In a Tube of 25) (cu TVA)
25
€ 58,25
€ 2,33 Each (In a Tube of 25) (fara TVA)
€ 70,48
€ 2,819 Each (In a Tube of 25) (cu TVA)
Informatii despre stoc temporar indisponibile
25
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 25 - 25 | € 2,33 | € 58,25 |
| 50 - 100 | € 2,17 | € 54,25 |
| 125+ | € 1,95 | € 48,75 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Serie
D Series
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
5.31mm
Lungime
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
20.82mm
Tara de origine
China
Detalii produs


