Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
64 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 36,60
€ 3,66 Each (Supplied in a Bag) (fara TVA)
€ 44,29
€ 4,43 Each (Supplied in a Bag) (cu TVA)
Impachetare pentru productie (Punga)
10
€ 36,60
€ 3,66 Each (Supplied in a Bag) (fara TVA)
€ 44,29
€ 4,43 Each (Supplied in a Bag) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Punga)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 49 | € 3,66 |
| 50 - 99 | € 3,22 |
| 100 - 249 | € 2,97 |
| 250+ | € 2,51 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
64 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Temperatura minima de lucru
-55 °C
Detalii produs


