Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor

€ 75,25
€ 3,01 Each (In a Tube of 25) (fara TVA)
€ 91,05
€ 3,642 Each (In a Tube of 25) (cu TVA)
25
€ 75,25
€ 3,01 Each (In a Tube of 25) (fara TVA)
€ 91,05
€ 3,642 Each (In a Tube of 25) (cu TVA)
Informatii despre stoc temporar indisponibile
25
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 25 - 25 | € 3,01 | € 75,25 |
| 50 - 100 | € 2,83 | € 70,75 |
| 125+ | € 2,51 | € 62,75 |

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor



