Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
5.31mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
20.82mm
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 17,40
€ 3,48 Buc. (Intr-un pachet de 5) (fara TVA)
€ 21,05
€ 4,211 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 17,40
€ 3,48 Buc. (Intr-un pachet de 5) (fara TVA)
€ 21,05
€ 4,211 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 3,48 | € 17,40 |
| 25 - 45 | € 2,93 | € 14,65 |
| 50 - 120 | € 2,56 | € 12,80 |
| 125 - 245 | € 2,36 | € 11,80 |
| 250+ | € 2,17 | € 10,85 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
5.31mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
20.82mm
Detalii produs


