Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
235 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
235 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.7mm
Temperatura minima de lucru
-55 °C
Detalii produs


