Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
277 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
5.31mm
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 53,70
€ 5,37 Each (Supplied in a Bag) (fara TVA)
€ 64,98
€ 6,50 Each (Supplied in a Bag) (cu TVA)
Impachetare pentru productie (Punga)
10
€ 53,70
€ 5,37 Each (Supplied in a Bag) (fara TVA)
€ 64,98
€ 6,50 Each (Supplied in a Bag) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Punga)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 24 | € 5,37 |
| 25 - 49 | € 5,04 |
| 50 - 99 | € 4,75 |
| 100+ | € 4,45 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
277 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
5.31mm
Inaltime
20.7mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


