Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
41 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Latime
5.31mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 17,20
€ 3,44 Buc. (Intr-un pachet de 5) (fara TVA)
€ 20,81
€ 4,162 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 17,20
€ 3,44 Buc. (Intr-un pachet de 5) (fara TVA)
€ 20,81
€ 4,162 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 3,44 | € 17,20 |
| 25 - 45 | € 2,89 | € 14,45 |
| 50 - 120 | € 2,70 | € 13,50 |
| 125 - 245 | € 2,50 | € 12,50 |
| 250+ | € 2,15 | € 10,75 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
41 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Latime
5.31mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


