Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
15.87mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 89,00
€ 4,45 Each (Supplied in a Tube) (fara TVA)
€ 105,91
€ 5,296 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
20
€ 89,00
€ 4,45 Each (Supplied in a Tube) (fara TVA)
€ 105,91
€ 5,296 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
20
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
20 - 48 | € 4,45 | € 8,90 |
50 - 98 | € 4,23 | € 8,46 |
100 - 198 | € 3,72 | € 7,44 |
200+ | € 3,46 | € 6,92 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
15.87mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Detalii produs