Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.8mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 139,50
€ 2,79 Each (Supplied in a Tube) (fara TVA)
€ 168,80
€ 3,376 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
50
€ 139,50
€ 2,79 Each (Supplied in a Tube) (fara TVA)
€ 168,80
€ 3,376 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 120 | € 2,79 | € 13,95 |
| 125 - 245 | € 2,61 | € 13,05 |
| 250 - 495 | € 2,49 | € 12,45 |
| 500+ | € 2,23 | € 11,15 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.8mm
Tara de origine
China
Detalii produs


