Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 11,70
€ 2,34 Buc. (Intr-un pachet de 5) (fara TVA)
€ 14,16
€ 2,831 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 11,70
€ 2,34 Buc. (Intr-un pachet de 5) (fara TVA)
€ 14,16
€ 2,831 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 2,34 | € 11,70 |
| 50 - 120 | € 1,97 | € 9,85 |
| 125 - 245 | € 1,84 | € 9,20 |
| 250 - 495 | € 1,71 | € 8,55 |
| 500+ | € 1,58 | € 7,90 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs


