Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 26,50
€ 2,65 Each (Supplied as a Tape) (fara TVA)
€ 32,06
€ 3,21 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
€ 26,50
€ 2,65 Each (Supplied as a Tape) (fara TVA)
€ 32,06
€ 3,21 Each (Supplied as a Tape) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Banda)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 49 | € 2,65 |
| 50 - 99 | € 2,48 |
| 100 - 249 | € 2,35 |
| 250+ | € 2,12 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


