Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
38 nC @ 10 V
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 2,56
€ 2,56 Each (Supplied as a Tape) (fara TVA)
€ 3,10
€ 3,10 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
1
€ 2,56
€ 2,56 Each (Supplied as a Tape) (fara TVA)
€ 3,10
€ 3,10 Each (Supplied as a Tape) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Banda)
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
38 nC @ 10 V
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


