Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
3.37mm
Tara de origine
Philippines
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor

P.O.A.
1
P.O.A.
Informatii despre stoc temporar indisponibile
1
Informatii despre stoc temporar indisponibile

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
3.37mm
Tara de origine
Philippines
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor



