Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 22,10
€ 2,21 Each (Supplied in a Tube) (fara TVA)
€ 26,30
€ 2,63 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 22,10
€ 2,21 Each (Supplied in a Tube) (fara TVA)
€ 26,30
€ 2,63 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
10 - 49 | € 2,21 |
50 - 99 | € 2,08 |
100 - 249 | € 1,94 |
250+ | € 1,79 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs