Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 22,90
€ 2,29 Each (Supplied as a Tape) (fara TVA)
€ 27,25
€ 2,73 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
€ 22,90
€ 2,29 Each (Supplied as a Tape) (fara TVA)
€ 27,25
€ 2,73 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
10 - 49 | € 2,29 |
50 - 99 | € 2,17 |
100 - 249 | € 2,02 |
250+ | € 1,91 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Detalii produs