Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4.1A
Maximum Drain Source Voltage Vds
800V
Numar pini
3
Maximum Drain Source Resistance Rds
3Ω
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.8V
Typical Gate Charge Qg @ Vgs
78nC
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
±20 V
Temperatura maxima de lucru
150°C
Transistor Configuration
Single
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Number of Elements per Chip
1
Automotive Standard
No
Tara de origine
China
Informatii despre stoc temporar indisponibile
€ 66,50
€ 1,33 Each (In a Tube of 50) (fara TVA)
€ 80,46
€ 1,609 Each (In a Tube of 50) (cu TVA)
50
€ 66,50
€ 1,33 Each (In a Tube of 50) (fara TVA)
€ 80,46
€ 1,609 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 1,33 | € 66,50 |
| 100 - 200 | € 1,23 | € 61,50 |
| 250 - 450 | € 1,10 | € 55,00 |
| 500 - 1200 | € 1,02 | € 51,00 |
| 1250+ | € 0,95 | € 47,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4.1A
Maximum Drain Source Voltage Vds
800V
Numar pini
3
Maximum Drain Source Resistance Rds
3Ω
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.8V
Typical Gate Charge Qg @ Vgs
78nC
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
±20 V
Temperatura maxima de lucru
150°C
Transistor Configuration
Single
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Number of Elements per Chip
1
Automotive Standard
No
Tara de origine
China


