Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
52 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 24,50
€ 2,45 Each (Supplied as a Tape) (fara TVA)
€ 29,64
€ 2,96 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
€ 24,50
€ 2,45 Each (Supplied as a Tape) (fara TVA)
€ 29,64
€ 2,96 Each (Supplied as a Tape) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Banda)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 49 | € 2,45 |
| 50 - 99 | € 2,34 |
| 100 - 249 | € 2,18 |
| 250+ | € 2,04 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
52 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


