Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
29 nC @ 10 V
Latime
4.7mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor

€ 1,85
€ 1,85 Buc. (fara TVA)
€ 2,24
€ 2,24 Buc. (cu TVA)
Standard
1
€ 1,85
€ 1,85 Buc. (fara TVA)
€ 2,24
€ 2,24 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 1,85 |
| 10 - 49 | € 1,57 |
| 50 - 99 | € 1,43 |
| 100 - 249 | € 1,36 |
| 250+ | € 1,25 |

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
29 nC @ 10 V
Latime
4.7mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor



