Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 7,40
€ 0,74 Each (Supplied as a Tape) (fara TVA)
€ 8,81
€ 0,88 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
€ 7,40
€ 0,74 Each (Supplied as a Tape) (fara TVA)
€ 8,81
€ 0,88 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
10 - 49 | € 0,74 |
50 - 99 | € 0,65 |
100 - 249 | € 0,61 |
250+ | € 0,55 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Detalii produs