Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
400 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Latime
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Temperatura maxima de lucru
+150 °C
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 23,10
€ 2,31 Buc. (Livrat pe rola) (fara TVA)
€ 27,95
€ 2,80 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 23,10
€ 2,31 Buc. (Livrat pe rola) (fara TVA)
€ 27,95
€ 2,80 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 49 | € 2,31 |
| 50 - 99 | € 2,16 |
| 100 - 249 | € 2,00 |
| 250+ | € 1,60 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
400 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Latime
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Temperatura maxima de lucru
+150 °C
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


