Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
14A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
0.16Ω
Maximum Power Dissipation Pd
88W
Maximum Gate Source Voltage Vgs
±20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
26nC
Forward Voltage Vf
2.5V
Temperatura maxima de lucru
175°C
Transistor Configuration
Single
Latime
10.67 mm
Inaltime
4.83mm
Lungime
9.65mm
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Number of Elements per Chip
1
Automotive Standard
No
Tara de origine
China
Informatii despre stoc temporar indisponibile
€ 4,90
€ 0,98 Buc. (Intr-un pachet de 5) (fara TVA)
€ 5,93
€ 1,186 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 4,90
€ 0,98 Buc. (Intr-un pachet de 5) (fara TVA)
€ 5,93
€ 1,186 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 0,98 | € 4,90 |
| 50 - 120 | € 0,91 | € 4,55 |
| 125 - 245 | € 0,81 | € 4,05 |
| 250 - 495 | € 0,76 | € 3,80 |
| 500+ | € 0,71 | € 3,55 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
14A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
0.16Ω
Maximum Power Dissipation Pd
88W
Maximum Gate Source Voltage Vgs
±20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
26nC
Forward Voltage Vf
2.5V
Temperatura maxima de lucru
175°C
Transistor Configuration
Single
Latime
10.67 mm
Inaltime
4.83mm
Lungime
9.65mm
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Number of Elements per Chip
1
Automotive Standard
No
Tara de origine
China


