Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
2.68 A
Maximum Drain Source Voltage
20 V
Serie
TrenchFET
Tip pachet
SC-70-6L
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Typical Gate Charge @ Vgs
4.2 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tara de origine
China
€ 600,00
€ 0,20 Buc. (Pe o rola de 3000) (fara TVA)
€ 726,00
€ 0,242 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 600,00
€ 0,20 Buc. (Pe o rola de 3000) (fara TVA)
€ 726,00
€ 0,242 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
2.68 A
Maximum Drain Source Voltage
20 V
Serie
TrenchFET
Tip pachet
SC-70-6L
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Typical Gate Charge @ Vgs
4.2 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tara de origine
China


