Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Serie
TrenchFET
Tip pachet
PowerPAK 1212-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Inaltime
1.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,75
€ 0,23 Buc. (Intr-un pachet de 25) (fara TVA)
€ 6,84
€ 0,274 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 5,75
€ 0,23 Buc. (Intr-un pachet de 25) (fara TVA)
€ 6,84
€ 0,274 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Serie
TrenchFET
Tip pachet
PowerPAK 1212-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Inaltime
1.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China