Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
30 V
Serie
U-MOSVIII-H
Tip pachet
SOP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
21 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
5mm
Lungime
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Forward Diode Voltage
1.2V
Inaltime
0.95mm
Tara de origine
Japan
Detalii produs
MOSFET Transistors, Toshiba
€ 4,70
€ 0,47 Buc. (Intr-un pachet de 10) (fara TVA)
€ 5,69
€ 0,569 Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 4,70
€ 0,47 Buc. (Intr-un pachet de 10) (fara TVA)
€ 5,69
€ 0,569 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
30 V
Serie
U-MOSVIII-H
Tip pachet
SOP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
21 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
5mm
Lungime
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Forward Diode Voltage
1.2V
Inaltime
0.95mm
Tara de origine
Japan
Detalii produs


