Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Serie
TK
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.45mm
Lungime
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Inaltime
15.1mm
Tara de origine
China
Detalii produs
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 104,50
€ 2,09 Each (In a Tube of 50) (fara TVA)
€ 126,44
€ 2,529 Each (In a Tube of 50) (cu TVA)
50
€ 104,50
€ 2,09 Each (In a Tube of 50) (fara TVA)
€ 126,44
€ 2,529 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 200 | € 2,09 | € 104,50 |
| 250 - 450 | € 2,02 | € 101,00 |
| 500+ | € 1,95 | € 97,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Serie
TK
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.45mm
Lungime
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Inaltime
15.1mm
Tara de origine
China
Detalii produs


