Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Serie
U-MOSVIII-H
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
192 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.45mm
Lungime
10.16mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Forward Diode Voltage
1.2V
Inaltime
15.1mm
Tara de origine
Japan
Detalii produs
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 7,25
€ 1,45 Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,77
€ 1,754 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 7,25
€ 1,45 Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,77
€ 1,754 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 1,45 | € 7,25 |
| 25 - 45 | € 0,86 | € 4,30 |
| 50+ | € 0,78 | € 3,90 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Serie
U-MOSVIII-H
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
192 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.45mm
Lungime
10.16mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Forward Diode Voltage
1.2V
Inaltime
15.1mm
Tara de origine
Japan
Detalii produs


