Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Serie
TK
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.16mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Inaltime
15.1mm
Detalii produs
MOSFET Transistors, Toshiba
€ 6,15
€ 1,23 Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,44
€ 1,488 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 6,15
€ 1,23 Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,44
€ 1,488 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Serie
TK
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.16mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Inaltime
15.1mm
Detalii produs


