Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Serie
TK
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.45mm
Lungime
10.16mm
Inaltime
15.1mm
Tara de origine
Japan
Detalii produs
MOSFET Transistors, Toshiba
€ 35,00
€ 0,70 Each (In a Tube of 50) (fara TVA)
€ 41,65
€ 0,833 Each (In a Tube of 50) (cu TVA)
50
€ 35,00
€ 0,70 Each (In a Tube of 50) (fara TVA)
€ 41,65
€ 0,833 Each (In a Tube of 50) (cu TVA)
50
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Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Serie
TK
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.45mm
Lungime
10.16mm
Inaltime
15.1mm
Tara de origine
Japan
Detalii produs