Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
53 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.16mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Inaltime
15.1mm
Serie
U-MOSVIII-H
Forward Diode Voltage
1.2V
Detalii produs
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
53 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.16mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Inaltime
15.1mm
Serie
U-MOSVIII-H
Forward Diode Voltage
1.2V
Detalii produs